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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2832 2SC2832A DESCRIPTION With TO-220 package Low collector saturation voltage High VCBO High speed switching APPLICATIONS For high speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL IN PARAMETER VCBO Collector-base voltage CHA E SEM NG 2SC2832 2SC2832A OND IC CONDITIONS TOR UC VALUE 800 900 500 8 5 10 3 UNIT Open emitter V VCEO VEBO IC ICM IB PC Tj Tstg Collector-emitter voltage Open base Open collector V V A A A W ae ae Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25ae 40 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage 2SC2832 2SC2832A IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A; L=25mH IC=3A; IB=0.6A IC=3A; IB=0.6A VCB=800V;IE=0 2SC2832 2SC2832A SYMBOL VCEO(SUS) VCEsat VBEsat MIN 500 TYP. MAX UNIT V 1.0 1.5 V V ICBO Collector cut-off current 100 VCB=900V;IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE=10V 15 8 100 |I A |I A Switching times ton tstg INC Fall time Turn-on time E SEM ANG H 2SC2832 2SC2832A 2SC2832 2SC2832A OND IC TOR UC 3 1.0 1.2 3.0 1.0 MHz |I s Storage time IC=3A ; IB1=-IB2=-0.6A VCC=200V |I s tf |I 1.2 s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2832 2SC2832A CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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